Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors

The fabrication process of modern microelectronic devices faces a significant challenge regarding the uniformity wafer processing during plasma etching. Particularly, nonuniformity is prominent at edge due to varying electrical properties, leading sheath bending and distorted ion trajectories. To address this issue, terminating structure known as focus ring employed modify near ensure uniform fluxes. However, subject erosion caused by plasma, making it crucial minimize energy bombarding ring. In light this, paper investigates impact parameters such wafer-focus gap, height, dielectric constant on angle onto conduct analysis, 2D3V particle-in-cell/Monte Carlo collision model utilized. study reveals existence horizontal electric fields with opposite directions inner Optimizing can be achieved adjusting material geometry Furthermore, reducing accomplished increasing height or decreasing